SSM40T03GH Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

90
T _C =25 ^o C
60
10V
8 .0V
6 .0V
30
V _G = 4. 0V
0
0.0
1.0
2.0
3.0
4.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I _D =14A
T _C =25°C
50
75
T _C =150 ^o C
50
SSM40T03GH,J
10V
8 .0V
6 .0V
25
V _G =4.0V
0
0.0
1.0
2.0
3.0
4.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =18A
V _G =10V
1.4
30
0.8
10
0
5
10
15
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.5
2.0
10
T _j =150 ^o C
T _j =25 ^o C
1.5
1
1.0
0.1
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/16/2005 Rev.2.1
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