SSM2605GY Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

12
10
V _DS =-24V
I _D =-4A
8
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
SSM2605GY
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
11/16/2007 Rev.1.00
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