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| SSM2605GY Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM2605GY
ELECTRICAL CHARACTERISTICS
(TJ=25oC unless otherwise specified)
Symbol
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ±20V
ID=-4A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
f=1.0MHz
SOURCE-DRAIN DIODE
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.6A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-30 -
-
V
- -0.02 - V/â
-
- 80 mΩ
-
- 120 mΩ
-1
-
-3 V
-
6
-
S
-
-
-1 uA
-
- -25 uA
-
- ±100 nA
- 5.5 8.8 nC
-
1
- nC
- 2.6 - nC
-
7
- ns
-
6
- ns
- 18 - ns
-
4
- ns
- 400 640 pF
- 90 - pF
- 30 - pF
Min. Typ. Max. Units
-
- -1.2 V
- 21 - ns
- 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156â/W when mounted on min. copper pad.
11/16/2007 Rev.1.00
www.SiliconStandard.com
2
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