SSM4800M Datasheet, PDF (3/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4800M
40
T _C =25 ^o C
30
20
10
V _G =10V
V _G =8.0V
V _G =6.0V
V _G =4.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
T _C =150 ^o C
30
20
10
V _G =10V
V _G =8.0V
V _G =6.0V
V _G =4.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
34
I _D =9A
30
T _c =25 ℃
26
22
18
14
10
2
3
4
5
6
7
8
9
10
11
V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.80
I _D =9A
1.60 _{V G =10V}
1.40
1.20
1.00
0.80
0.60
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Rev.2.01 6/26/2003
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