SSM4800M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4800M
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
Description
D
D
D
D
SO-8
G
S
S
S
BV _DSS
R _DS(ON)
I_D
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SSM4800M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low-voltage applications such as DC/DC converters.
G
G
25V
18mΩ
9A
D^D
S^S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
25
± 20
9
7
40
2.5
0.02
-55 to 150
-55 to 150
Max.
Value
50
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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