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| SSM9987GM Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM9987GM
ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified)
Symbol
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=1A
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=80V, VGS=0V
VDS=64V ,VGS=0V
VGS=±25V
ID=3A
VDS=64V
VGS=4.5V
VDS=40V
ID=1A
RG=3.3Ω,VGS=10V
RD=40Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
80 -
-
V
- 0.08 - V/â
-
- 90 mΩ
-
- 105 mΩ
1
-
3V
-
7
-
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 11 18 nC
-
3
- nC
-
5
- nC
-
8
- ns
-
4
- ns
- 24 - ns
-
5
- ns
- 980 1570 pF
- 70 - pF
- 50 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 30 - ns
- 40 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135â/W when mounted on min. copper pad.
05/31/2007 Rev.1.00
www.SiliconStandard.com
2
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