SSM9987GM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9987GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low Gate Charge
Single Drive Requirement
Surface Mount Package
DESCRIPTION
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BV_DSS
R_DS(ON)
I_D
80V
90mΩ
3.5A
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
D1
D2
switching, ruggedized device design, lower on-resistance
and cost-effectiveness.
G1
G2
Pb-free; RoHS-compliant
S1
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 10V
Continuous Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
80
±25
3.5
2.8
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
℃/W
05/31/2007 Rev.1.00
www.SiliconStandard.com
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