 English |
|
|
|
|
|
|
|
| SSM6679M Datasheet, PDF (2/4 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
| |||
| ◁ |
SSM6679M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/â Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-14A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-11A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-14A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 25V
ID=-14A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3⦠,VGS=-10V
RD=15â¦
VGS=0V
VDS=-25V
f=1.0MHz
-30 -
-
V
- -0.03 - V/°C
-
-
9 mâ¦
-
- 13 mâ¦
-1 - -3 V
- 26 -
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 37 60 nC
-
3
- nC
- 25 - nC
- 13 - ns
- 11 - ns
- 58 - ns
- 43 - ns
- 2860 4580 pF
- 950 - pF
- 640 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-14A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 48 - ns
- 46 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 °C/W when mounted on Min. copper pad.
Rev.2.02 4/06/2004
www.SiliconStandard.com
2 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese