SSM6679M Datasheet, PDF (1/4 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM6679M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching characteristics
Description
D
D
D
D
SO-8
G
SS
S
Advanced power MOSFETs from Silicon Standard provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial and industrial
surface-mount applications and is well suited for low voltage applications
such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
-30V
9mΩ
-14A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=100°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
-30
± 25
-14
-8.9
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°C/W
Rev.2.02 4/06/2004
www.SiliconStandard.com
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