SSM4955GM Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – Dual P-channel Enhancement-mode Power MOSFETs

SSM4955GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BV_DSS
∆ BV _DSS/∆ Tj
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance²
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge ²
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time ²
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Test Conditions
V_GS=0V, I_D=-250uA
Reference to 25°C, I_D=-1mA
V_GS=-4.5V, I_D=-5A
V_GS=-2.5V, I_D=-4A
V_DS=V_GS, I_D=-250uA
V_DS=-5V, I_D=-5A
V_{DS=-20V, VGS=0V}
V_DS=-16V ,V_GS=0V, Tj = 70°C
V_GS=±20V
I_D=-5A
V_DS=-16V
V_GS=-4.5V
V_DS=-10V
I_D=-1A
R_G=3.3Ω , V_GS=-10V
R_D=10Ω
V_GS=0V
V_DS=-20V
f=1.0MHz
Min. Typ. Max. Units
-20 -
-
V
- -0.01 - V/°C
-
- 45 mΩ
-
- 65 mΩ
-0.5 - -1.2 V
-
9
-
S
-
- -1 ^uA
-
- -25 uA
-
- ±100 nA
- 19 30 nC
-
3 - nC
-
6 - nC
-
9-
ns
- 10 - ns
- 52 - ns
- 24 - ns
- 1400 2240 pF
- 270 - pF
- 230 - pF
Source-Drain Diode
Symbol
V_SD
t_rr
Q_rr
Parameter
Forward voltage ²
Reverse-recovery time
Reverse-recovery charge
Test Conditions
I_S=-1.6A, V_GS=0V
I_S=-5A, V_GS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 32 - ns
- 22 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
11/26/2005 Rev.3.01
www.SiliconStandard.com
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