SSM4955GM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – Dual P-channel Enhancement-mode Power MOSFETs

SSM4955GM
Dual P-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
-20V
45mΩ
-5.6A
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
DESCRIPTION
The SSM4955GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as battery
management and general load-switching circuits.
The SSM4955GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current ³, T _A = 25°C
Pulsed drain current ^1,2
T_A = 100°C
Total power dissipation ³, T_A = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJA
Parameter
Maximum thermal resistance, junction-ambient³
Value
-20
± 20
-5.6
-4.5
-20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 135°C/W when mounted on the minimum pad area required for soldering.
11/26/2005 Rev.3.01
www.SiliconStandard.com
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