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| SSM4920M Datasheet, PDF (2/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
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SSM4920M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=7A
VGS=4.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS=±20V
ID=7A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=6Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
25 - - V
- 0.037 - V/â
- - 25 mΩ
- - 35 mΩ
1 - 3V
- 14 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 10.5 - nC
- 1.9 - nC
- 7.5 - nC
- 8 - ns
- 9.5 - ns
- 25 - ns
- 13.5 - ns
- 395 - pF
- 260 - pF
- 105 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25â, IS=2.1A, VGS=0V
Min. Typ. Max. Units
- - 2.1 A
- - 20 A
- 0.8 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
4.Pulse width <10us , duty cycle <1%.
Rev.2.01 6/26/2003
www.SiliconStandard.com
2 of 6
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