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SSM4920M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
SSM4920M
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,4
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
BV DSS
R DS(ON)
ID
25V
25mΩ
7A
D1
D2
G1
G2
S1
S2
Rating
25
± 20
7
5.7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Value
62.5
Unit
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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