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SSM20G45EGH Datasheet, PDF (2/7 Pages) Silicon Standard Corp. – N-channel Insulated-Gate Bipolar Transistor
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SSM20G45EGH/J
ELECTRICAL CHARACTERISTICS Tj = 25°C (unless otherwise specified)
Symbol
IGES
ICES
VCE(sate
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Parameter
Test Conditions
Gate-emitter leakage current
VGE=6V, VCE=0V
Collector-emitter leakage current VCE=450V, VGE=0V
Collector-emitter saturation voltage VGE=4.5V, ICP=130A (Pulsed)
Gate threshold voltage
VCE=VGE, IC=250uA
Total gate charge
IC=40A
Gate-emitter charge
VCE=300V
Gate-collector charge
VGE=5V
Turn-on delay time
VCC=200V
Rise time
IC=40A
Turn-off delay time
RG=25Ω
Fall fime
VGE=5V
Input capacitance
VGE=0V
Output capacitance
VCE=25V
Reverse transfer capacitance
f=1.0MHz
Min. Typ. Max. Units
-
-
10 uA
-
-
10 uA
-
5
8
V
-
- 1.2 V
-
51
-
nC
-
2
- nC
- 5.4 - nC
-
5.5
-
ns
-
72
-
ns
- 640 -
ns
-
2.6
-
us
- 2095 -
pF
- 145 -
pF
-
35
-
pF
5/16/2006 Rev.3.01
www.SiliconStandard.com
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