SSM20G45EGH Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – N-channel Insulated-Gate Bipolar Transistor

SSM20G45EGH/J
N-channel Insulated-Gate Bipolar Transistor
PRODUCT SUMMARY
V _CES
V _CE(sat)
I _CP
450V
5V typ.
130A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G _DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM20G45E acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for use in short-duration, high-current strobe
applications, such as still-camera flash.
The SSM20G45EGH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM20G45EGJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The gate has internal ESD protection.
Symbol
V_CES
V_GE
V _{GE P}
ICP
P_D
Parameter
Collector-emitter voltage
Gate-emitter voltage
Pulsed gate-emitter voltage
Pulsed collector current¹
Total power dissipation, T_C = 25°C
Value
450
±6
±8
130
20
Units
V
V
V
A
W
T_STG
T_J
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJC
Parameter
Maximum thermal resistance, junction-case
-55 to 150
°C
-55 to 150
°C
Value
6
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
5/16/2006 Rev.3.01
www.SiliconStandard.com
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