S29JL032J70TFI320 Datasheet, PDF (58/63 Pages) SPANSION – 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory

Data Sheet
18. Erase and Programming Performance
Parameter
Typ (Note 1) Max (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
0.5
5
sec
Excludes 00h programming
39
sec
prior to erasure (Note 3)
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
6
80
µs
6
80
µs
Excludes system level
overhead (Note 4)
4
70
µs
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V_CC = 3.0V, 100,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90°C, V_CC = 2.7V, 1,000,000 cycles.
3. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1
on page 38 for further information on command definitions.
5. The device has a minimum program and erase cycle endurance of 100,000 cycles per sector.
19. Pin Capacitance
Parameter Symbol
C_IN
C_OUT
C_IN2
Parameter Description
Input Capacitance (applies to A20-A0, DQ15-DQ0)
Output Capacitance (applies to DQ15-DQ0, RY/BY#)
Control Pin Capacitance
(applies to CE#, WE#, OE#, WP#/ACC, RESET#, BYTE#)
Notes:
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Max
8.5
5.5
12
Unit
pF
pF
pF
58
S29JL032J
S29JL032J_00_06 December 16, 2011