S29JL032J70TFI320 Datasheet, PDF (45/63 Pages) SPANSION – 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory

Data Sheet
13. Operating Ranges
Industrial (I) Devices
Ambient Temperature (T_A)
–40°C to +85°C
V_CC Supply Voltages
V_CC for standard voltage range 2.7V to 3.6V
Operating ranges define those limits between which the functionality of the device is guaranteed.
14. DC Characteristics
14.1
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ Max Unit
I_LI
Input Load Current
I_LIT
A9 and RESET# Input Load Current
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
V_CC = V_{CC max}, OE# = V_IH;
A9 or RESET# = 12.5V
±1.0
µA
35
µA
I_LO
Output Leakage Current
I_LR
Reset Leakage Current
I_CC1
V_CC Active Read Current
(Notes 1, 2)
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}, OE# = V_IH
V_CC = V_{CC max}; RESET# = 12.5V
CE# = V_IL, OE# ₌ V_IH,
Byte Mode
5 MHz
1 MHz
CE# = V_IL, OE# = V_IH,
Word Mode
5 MHz
1 MHz
±1.0
µA
35
µA
10
16
2
4
mA
10
16
2
4
I_CC2
V_CC Active Write Current (Notes 2, 3)
I_CC3
V_CC Standby Current (Note 2)
I_CC4
V_CC Reset Current (Note 2)
I_CC5
Automatic Sleep Mode (Notes 2, 4)
I_CC6
V_CC Active Read-While-Program Current
(Note 2)
CE# = V_IL, OE# = V_IH, WE# = V_IL
CE#, RESET# = V_CC ± 0.3V
RESET# = V_SS ± 0.3V
V_IH = V_CC ± 0.3V;
V_IL = V_SS ± 0.3V
CE# = V_IL, OE# = V_IH,
1 MHz
Byte
Word
15
30
mA
0.2
5
µA
0.2
5
µA
0.2
5
µA
21
45
mA
21
45
I_CC7
V_CC Active Read-While-Erase Current
(Note 2)
CE# = V_IL, OE# = V_IH,
1 MHz
Byte
Word
21
45
mA
21
45
I_CC8
V_CC Active Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = V_IL, OE# = V_IH
17
35
mA
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_HH
Voltage for WP#/ACC Sector Protect/
Unprotect and Program Acceleration
V_CC = 3.0V ± 10%
–0.5
0.7 x V_CC
8.5
0.8
V
V_CC + 0.3 V
9.5
V
V_ID
Voltage for Autoselect and Temporary Sector
Unprotect
V_CC = 3.0V ± 10%
8.5
12.5
V
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-Out Voltage (Note 5)
I_OL = 2.0 mA, V_CC = V_{CC min}
I_OH = –2.0 mA, V_CC = V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
0.45
V
0.85 x V_CC
V
V_CC–0.4
1.8
2.0
2.5
V
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
December 16, 2011 S29JL032J_00_06
S29JL032J
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