AM29PDL640G Datasheet, PDF (5/61 Pages) SPANSION – 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control

PRELIMINARY
Figure 23. Sector/Sector Block Protect and
Unprotect Timing Diagram .............................................................. 52
Alternate CE# Controlled Erase and Program Operations ..... 53
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................... 54
Erase And Programming Performance . . . . . . . 55
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 55
BGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . . 55
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 56
FBE080—80-Ball Fine-pitch Ball Grid Array
12 x 11 mm package .............................................................. 56
FBE063—63-Ball Fine-pitch Ball Grid Array
12 x 11 mm package .............................................................. 57
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58
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Am29PDL640G
February 26, 2003