AM29PDL640G Datasheet, PDF (27/61 Pages) SPANSION – 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control

Addresses
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Data
0017h
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
007Dh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
PRELIMINARY
Table 12. Device Geometry Definition
Device Size = 2^N byte
Description
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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Am29PDL640G
February 26, 2003