MB84VD23280FA Datasheet, PDF (45/49 Pages) SPANSION – 64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM

MB84VD23280FA-70
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Value
Unit
Min
Typ
Max
Remarks
Sector Erase Time
—
0.5
2
s
Excludes programming time
prior to erasure
Word Programming Time
—
6
100
µs
Excludes system-level
overhead
Byte Programming Time
—
4
80
µs
Excludes system-level
overhead
Chip Programming Time
—
25.2
95
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycle
Note : Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Data= Checker
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Data Retention Supply Voltage
VDH
Standby Current
VDH = 3.0 V
IDDS2
Chip Deselect to Data Retention Mode Time
tCDR
Recovery Time
tR
Note : tRC: Read cycle time
Value
Min Typ Max
1.5
—
3.1
—
—
15
0
—
—
tRC
—
—
Unit
V
µA
ns
ns
• CE1s Controlled Data Retention Mode *¹
VCCs
DATA RETENTION MODE
2.7 V
VIH
*2
*2
VDH
VCCS – 0.2 V
CE1s
tCDR
tR
VSS
*1 : In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to VCCs–0.2 V or VSS to
0.2 V during data retention mode. Other input and input/output pins can be used between –0.3 V to VCCs+0.3 V.
*2 : When CE1s is operating at the VIH Min level, the standby current is given by ISB1s during the transition
of VCCs from Vccs Max to VIH Min level.
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