MB84VD23280FA Datasheet, PDF (38/49 Pages) SPANSION – 64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM

MB84VD23280FA-70
s 8M SRAM CHARACTERISTICS for MCP
• Read Cycle (SRAM)
Parameter
Value
Symbol
Unit
Min
Max
Read Cycle Time
tRC
70
—
ns
Address Access Time
tAA
—
70
ns
Chip Enable (CE1s) Access Time
tCO1
—
70
ns
Chip Enable (CE2s) Access Time
tCO2
—
70
ns
Output Enable Access Time
tOE
—
35
ns
LB, UB to Output Valid
tBA
—
70
ns
Chip Enable (CE1s Low and CE2s High) to Output Active
tCOE
5
—
ns
Output Enable Low to Output Active
tOEE
0
—
ns
LB, UB Enable Low to Output Active
tBE
0
—
ns
Chip Enable (CE1s High or CE2s Low) to Output High-Z
tOD
—
25
ns
Output Enable High to Output High-Z
tODO
—
25
ns
LB, UB Output Enable to Output High-Z
tBD
—
25
ns
Output Data Hold Time
tOH
10
—
ns
Note: Test Conditions–Output Load:1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 0.5 × VCCs
Output: 0.5 × VCCs
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