S29NS-P Datasheet, PDF (44/86 Pages) SPANSION – MirrorBit Flash Family

Data Sheet (Advance Information)
The following is a C source code example of using the program suspend function. Refer to the Spansion Low
Level Driver User’s Guide (www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0; /* write suspend command
*/
Cycle
1
Operation
Write
Table 6.22 Program Resume
(LLD Function = lld_ProgramResumeCmd)
Byte Address
Bank Address
Word Address
Bank Address
Data
0030h
The following is a C source code example of using the program resume function. Refer to the Spansion Low
Level Driver User’s Guide (www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030; /* write resume command
*/
6.5.7
6.5.8
Accelerated Program/Sector Erase
Accelerated single word programming, write buffer programming and sector erase, operations are enabled
through the V_PP function. This method is faster than the standard chip program and erase command
sequences.
The accelerated chip program and erase functions must not be used more than 100 times per sector.
In addition, accelerated chip program and erase should be performed at room temperature
(30°C ±10°C).
If the system asserts V_HH on this input, the device automatically enters the accelerated mode and uses the
higher voltage on the input to reduce the time required for program and erase operations. The system can
then use the Write Buffer Load command sequence provided by the Unlock Bypass mode. Note that if a
Write-to-Buffer-Abort Reset is required while in Unlock Bypass mode, the full 3-cycle RESET command
sequence must be used to reset the device. Removing V_HH from the V_PP input, upon completion of the
embedded program or erase operation, returns the device to normal operation.
„ Sectors must be unlocked prior to raising V_PP to V_HH.
„ The V_PP pin must not be at V_HH for operations other than accelerated programming and accelerated sector
erase, or device damage may result.
„ The V_PP pin must not be left floating or unconnected; inconsistent behavior of the device may result.
„ V_PP locks all sector if set to V_IL; V_PP should be set to V_IH for all other conditions.
Unlock Bypass
The unlock bypass feature allows the system to primarily program to a bank faster than using the standard
program command sequence. The unlock bypass command sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then
enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. The host system may also initiate the chip
erase and sector erase sequences in the unlock bypass mode. The erase command sequences are four
cycles in length instead of six cycles. Table 11.1 shows the requirements for the unlock bypass command
sequences.
During the unlock bypass mode, only the Read, Unlock Bypass Program, Unlock Bypass Sector Erase,
Unlock Bypass Chip Erase, and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode,
the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain
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S29NS-P MirrorBit^TM Flash Family
S29NS-P_00_A1 February 20, 2007