S71AL016D Datasheet, PDF (41/76 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory and RAM

Advance Information
DC Characteristics
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ Max Unit
I_LI
Input Load Current
I_LIT
A9 Input Load Current
I_LO
Output Leakage Current
I_CC1
V_CC Active Read Current
(Notes 1, 2)
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
V_CC = V_{CC max}; A9 = 12.5 V
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}
CE# = V_IL, OE# ₌ V_IH,
Byte Mode
10 MHz
5 MHz
1 MHz
CE# = V_IL, OE# ₌ V_IH,
Word Mode
10 MHz
5 MHz
1 MHz
±1.0
µA
35
µA
±1.0
µA
15
30
9
16
2
4
mA
18
35
9
16
2
4
I_CC2
V_CC Active Write Current
(Notes 2, 3, 5)
CE# = V_IL, OE# = V_IH
20
35
mA
I_CC3
V_CC Standby Current (Notes 2, 4) CE#, RESET# = V_CC±0.3 V
I_CC4
V_CC Standby Current During Reset
(Notes 2, 4)
RESET# = V_SS ± 0.3 V
0.2
5
µA
0.2
5
µA
I_CC5
Automatic Sleep Mode
(Notes 2, 4, 6)
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and
Temporary Sector Unprotect
V_IH = V_CC ± 0.3 V;
V_IL = V_SS ± 0.3 V
V_CC = 3.3 V
–0.5
0.7 x V_CC
11.5
0.2
5
µA
0.8
V
V_CC + 0.3 V
12.5
V
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
I_OL = 4.0 mA, V_CC = V_{CC min}
Output High Voltage
I_OH = -2.0 mA, V_CC = V_{CC min}
I_OH = -100 µA, V_CC = V_{CC min}
Low V_CC Lock-Out Voltage (Note 4)
2.4
V_CC–0.4
2.3
0.45
V
V
V
2.5
V
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH. Typical V_CC is 3.0 V.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep
mode current is 200 nA.
6. Not 100% tested.
August 4, 2004 S29AL016D_00_A1_E
S29AL016D
41