S29GL-N_07 Datasheet, PDF (39/79 Pages) SPANSION – 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology

Data Sheet
Table 9.3 Device Geometry Definition
Addresses (x16) Addresses (x8)
27h
4Eh
28h
50h
29h
52h
2Ah
54h
2Bh
56h
2Ch
58h
2Dh
5Ah
2Eh
5Ch
2Fh
5Eh
30h
60h
31h
60h
32h
64h
33h
66h
34h
68h
35h
6Ah
36h
6Ch
37h
6Eh
38h
70h
39h
72h
3Ah
74h
3Bh
76h
3Ch
78h
Data
00xxh
000xh
0000h
0005h
0000h
00xxh
00xxh
000xh
00x0h
000xh
00xxh
0000h
0000h
000xh
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Description
Device Size = 2^N byte
0017h = 64 Mb, 0016h = 32 Mb
Flash Device Interface description (refer to CFI publication 100)
0001h = x16-only bus devices
0002h = x8/x16 bus devices
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
007Fh, 0000h, 0000h, 0001h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)
0007h, 0000h, 0020h, 0000h = 64 Mb (03, 04)
003Fh, 0000h, 0000h, 0001h = 32 Mb (01, 02, V1, V2)
0007h, 0000h, 0020h, 0000h = 32 Mb (03, 04)
Erase Block Region 2 Information (refer to CFI publication 100)
0000h, 0000h, 0000h, 0000h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)
007Eh, 0000h, 0000h, 0001h = 64 Mb (03, 04)
0000h, 0000h, 0000h, 0000h = 32 Mb (01, 02, V1, V2)
003Eh, 0000h, 0000h, 0001h = 32 Mb (03, 04)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit^® Flash Family
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