MB84VD22184FM Datasheet, PDF (39/47 Pages) SPANSION – 32M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD22184FM/VD22194FM-70
• Write Cycle *¹ (WE control) (SRAM)
Address
tAS
WE
CE1s
tWC
tWP
tWR
tAW
tCW
CE2s
LB, UB
DOUT
*2
DIN
*4
tCW
tBW
tODW
tOEW
*3
tDS
tDH
Valid Data Input
*4
*1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance.
*2 : If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the output
will remain at high impedance.
*3 : If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the output
will remain at high impedance.
*4 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity
must not be applied.
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