MB84VD22184FM Datasheet, PDF (3/47 Pages) SPANSION – 32M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM

MB84VD22184FM/VD22194FM-70
(Continued)
— FLASH MEMORY
• Simultaneous Read/Write Operations (Dual Bank)
Bank 1 : 8 Mbit (8 KB × 8 and 64 KB × 15)
Bank 2 : 24 Mbit (64 KB × 48)
Host system can program or erase in one bank, and then read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Minimum 100,000 Write/Erase Cycles
• Sector Erase Architecture
Eight 4K word and sixty-three 32K word sectors in word mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD22184: Top sector
MB84VD22194: Bottom sector
• Embedded Erase^TM * Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program^TM * Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion
• Ready-Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf Write Inhibit ≤ 2.5 V
• HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
At VIL, allows protection of “outermost” 2 × 8 bytes on boot sectors, regardless of sector protection/unprotection
status.
At VIH, allows removal of boot sector protection
At VACC, increases program performance
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL34TF/BF” Datasheet in Detailed Function
— SRAM
• Power Dissipation
Operating : 40 mA Max
Standby : 10 µA Max
• Power Down Features using CE1s and CE2s
• Data Retention Supply Voltage: 1.5 V to 3.1 V
• CE1s and CE2s Chip Select
• Byte Data Control: LB (DQ7 to DQ0), UB (DQ15 to DQ8)
*: Embedded Erase^TM and Embedded Program^TM are trademarks of Advanced Micro Devices, Inc.
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