S30MS-P Datasheet, PDF (37/41 Pages) SPANSION – 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit™ Technology

Data Sheet (Preliminary)
Figure 13.4 RY/BY#: Termination for the Ready/Busy Pin (RY/BY#)
VCC
VCC
Device
VSS
R
RY/BY#
CL
Read y
V _CC
VOL=0.1V, VOH= VCC - 0.1V
VOL
Busy
VOL
tf
tr
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
R = ^{VCC max - VOL}
IOL + IL
1.95 V
=
3 mA + IL
VOH
13.2.1
When WP# Signal Goes Low
Holding the WP# pin low protects the device during power transitions. If WP# is low during the program/erase
command input period, the device is protected and does not enter the program/erase operation. If WP# is
high during the program/erase command input period, the device can execute the program/erase operation.
The user should keep the WP# pin either high or low during the complete command & program/erase
operation. The operations are enabled and disabled as shown in the following timing diagrams:
August 4, 2006 S30MS-P_00_A7
S30MS-P ORNAND^TM Flash Family
35