S29PL-N Datasheet, PDF (32/85 Pages) SPANSION – 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory

Preliminary
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
wc = number of words – 1
Write Next Word,
No
Decrement wc:
PA data , wc = wc – 1
Yes
wc = 0?
No
Write Buffer
Abort Desired?
Yes
Write to a Different
Sector Address to Cause
Write Buffer Abort
Confirm command:
SA 29h
Wait 4 µs
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Polling Status
Yes
= Done?
No
No
Error?
RESET. Issue Write Buffer
Abort Reset Command
Yes
Write Buffer
Abort?
No
FAIL. Issue reset command
to return to read array mode.
Yes
PASS. Device is in
read mode.
Figure 7.2 Write Buffer Programming Operation
7.4.3 Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 12.1, and
Figure 7.3.) The device does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically programs and verifies the entire memory for an all zero data pat-
tern prior to electrical erase. The system is not required to provide any controls or timings during
these operations.
After the command sequence is written, a sector erase time-out of no less than t_SEA occurs. Dur-
ing the time-out period, additional sector addresses and sector erase commands can be written.
Loading the sector erase buffer can be done in any sequence, and the number of sectors can be
from one sector to all sectors. The time between these additional cycles must be less than t_SEA.
Any sector erase address and command following the exceeded time-out (t_SEA) may or may not
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S29PL-N MirrorBit™ Flash Family
S29PL-N_00_A4 November 23, 2005