S73WS256N Datasheet, PDF (214/251 Pages) SPANSION – Stacked Multi-Chip Product (MCP)

Preliminary
82.1 Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3
Type
A2 A1 A0 BT=0
BT=1
0 0 0RGH 5HJLVWHU 6HW    5HVHUYHG 
6HTXHQWLDO



01
5HVHUYHG



,QWHUOHDYH



10
5HVHUYHG


Mode Select



11
5HVHUYHG


BA1 BA0 Mode   


Write Burst Length
A9
Length

%XUVW

6LQJOH %LW
   5HVHUYHG
   5HVHUYHG 5HVHUYHG
6HWWLQJ




 5HVHUYHG

 5HVHUYHG

IRU
1RUPDO




 5HVHUYHG 5HVHUYHG
 5HVHUYHG 5HVHUYHG
056
   5HVHUYHG
   )XOO 3DJH 5HVHUYHG
1RWH )XOO 3DJH /HQJWK [  0E  0E  0E  0E 
Address
)XQFWLRQ
Table 82.1 Register Programmed with Extended MRS
BA1 _BA0 A12 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
BA0
A10
0RGH 6HOHFW
5)8
'6
5)8
A2
A1
A0
3$65
82.2 EMRS for PASR (Partial Array Self Refresh) and DS (Driver Strength)
BA1 BA0








A12-A10/AP
Mode Select
Mode
A6
1RUPDO 056

5HVHUYHG

(056 IRU 0RELOH 6'5$0

5HVHUYHG

Reserved Address
A9
A8
A7




Driver Strength
A5 Driver Strength

)XOO






A4
A3


A2 A1 A0








PASR
Size of Refreshed Array
)XOO $UUD\
 RI )XOO $UUD\
 RI )XOO $UUD\
5HVHUYHG
5HVHUYHG
5HVHUYHG
5HVHUYHG
5HVHUYHG
1RWHV
 5)8 5HVHUYHG IRU IXWXUH XVH VKRXOG VWD\  GXULQJ 056 F\FOH
 ,I $ LV KLJK GXULQJ 056 F\FOH %XUVW 5HDG 6LQJOH %LW :ULWH IXQFWLRQ ZLOO EH HQDEOHG
83 Partial Array Self Refresh
,Q RUGHU WR VDYH SRZHU FRQVXPSWLRQ 0RELOH 6'5$0 KDV D 3$65 RSWLRQ 0RELOH 6'5$0 VXS
SRUWV  NLQGV RI 3$65 LQ VHOI UHIUHVK PRGH IXOO DUUD\  RI IXOO DUUD\  RI IXOO DUUD\ 6HH
)LJXUH 
212
S73WS256N Based MCPs
SDRAM_04_A0 May 12, 2005