S29GLXXXM Datasheet, PDF (129/160 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

Preliminary
AC Characteristics
Erase and Program Operations-S29GL128M only
Parameter
JEDEC
Std.
Description
Speed Options
90
10
Unit
t_AVAV
t_WC
Write Cycle Time (Note 1)
Min
90
100
ns
t_AVWL
t_AS
Address Setup Time
Min
0
ns
t_ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t_WLAX
t_AH
Address Hold Time
Min
45
ns
t_AHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
t_DVWH
t_DS
Data Setup Time
Min
45
ns
t_WHDX
t_DH
Data Hold Time
Min
0
ns
t_CEPH
CE# High during toggle bit polling
Min
20
ns
t_OEPH
OE# High during toggle bit polling
Min
20
ns
t_GHWL
t_GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t_ELWL
t_CS
CE# Setup Time
Min
0
ns
t_WHEH
t_CH
CE# Hold Time
Min
0
ns
t_WLWH
t_WP
Write Pulse Width
Min
35
ns
t_WHDL
t_WPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
t_WHWH1
t_WHWH1 Single Word Program Operation (Note 2)
Typ
60
µs
Accelerated Single Word Program Operation (Note 2)
Typ
54
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
t_VHH
V_HH Rise and Fall Time (Note 1)
Min
250
ns
t_VCS
V_CC Setup Time (Note 1)
Min
50
µs
t_BUSY
WE# High to RY/BY# Low
Min
90
100
ns
t_POLL
Program Valid before Status Polling
Max
4
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t_POLL, the device requires t_POLL before reading status data, once programming has resumed
(that is, the program resume command has been written). If the suspend command was issued after t_POLL, status data is available imme-
diately after programming has resumed. See Figure 17.
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit^TM Flash Family
129