S29GLXXXM Datasheet, PDF (1/160 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

S29GLxxxM MirrorBit^TM Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
PRELIMINARY
Distinctive Characteristics
Architectural Advantages
„ Single power supply operation
— 3 volt read, erase, and program operations
„ Manufactured on 0.23 um MirrorBit process
technology
„ SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
„ Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector models): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sectors
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64
Kbyte) sectors of 64 32Kword sectors
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
„ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
„ 100,000 erase cycles typical per sector
„ 20-year data retention typical
Performance Characteristics
„ High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
100 ns access time (256Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
„ Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
„ Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
„ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
„ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V_ID-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Publication Number S29GLxxxM_00 Revision A Amendment 5 Issue Date April 30, 2004