S71GS256 Datasheet, PDF (126/195 Pages) SPANSION – 128N based MCPs

Advance Information
DC Characteristics
Table 26. Electrical Characteristics and Operating Conditions
Description
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Asynchronous Random READ
Asynchronous Page READ
Initial Access, Burst READ
Continuous Burst READ
WRITE Operating Current
Standby Current
Conditions
Symbol
V_CC
V_CCQ
W: 1.8V
J: 1.5V
V_IH
V_IL
I_OH = -0.2mA
V_OH
I_OL = +0.2mA
V_OL
V_IN = 0 to V_CCQ
I_LI
OE# = V_IH or
Chip Disabled
I_LO
Operating Current
-70
V_IN = V_CCQ or 0V
-85
Chip Enabled,
I_CC1
IOUT = 0
-70
-85
V_IN = V_CCQ or 0V
Chip Enabled,
IOUT = 0
I_CC1
80 MHz
66 MHz
80 MHz
66 MHz
V_IN = V_CCQ or 0V
Chip Enabled
I_CC2
-70
-85
V_IN = V_CCQ or 0V
CE# = V_CCQ
I_SB
128 M
64 M
32 M
Min
1.70
1.70
1.35
V_CCQ - 0.4
-0.20
0.80 V_CCQ
Max
1.95
1.95
1.65
V_CCQ + 0.2
0.4
0.20 V_CCQ
1
Units
V
V
V
V
V
V
V
µA
Notes
2
3
4
4
1
µA
25
20
mA
5
15
12
35
30
mA
5
18
15
25
mA
20
180
120
µA
6
110
Notes:
1. Wireless Temperature (-25ºC < TC < +85ºC); Industrial Temperature (-40ºC < TC < +85ºC).
2. Input signals may overshoot to V_CCQ + 1.0V for periods less than 2ns during transitions.
3. Input signals may undershoot to V_SS - 1.0V for periods less than 2ns during transitions.
4. BCR[5:4] = 00b.
5. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the
current required to drive output capacitance expected in the actual system.
6. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. To achieve low standby current,
all inputs must be driven to either V_CCQ or V_SS.
126
CellularRAM Type 2
cellRAM_00_A0 October 4, 2004