S25FL132K Datasheet, PDF (12/85 Pages) SPANSION – CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface with Multi-I/O Industrial and Automotive Temperature

Data Sheet (Preliminary)
2.1.2.3
New Features
The S25FL132K and S25FL164K introduces new features to low density SPI category memories:
 Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read
commands
 Automotive temperature range
 Volatile configuration option in addition to legacy non-volatile configuration
2.2
Glossary
 Command = All information transferred between the host system and memory during one period while
CS# is low. This includes the instruction (sometimes called an operation code or opcode) and any required
address, mode bits, latency cycles, or data.
 Flash = The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases
large blocks of memory bits in parallel, making the erase operation much faster than early EEPROM.
 High = A signal voltage level ≥ V_IH or a logic level representing a binary one (1).
 Instruction = The 8-bit code indicating the function to be performed by a command (sometimes called an
operation code or opcode). The instruction is always the first 8 bits transferred from host system to the
memory in any command.
 Low = A signal voltage level ≤ V_IL or a logic level representing a binary zero (0).
 LSB = Least Significant Bit = Generally the right most bit, with the lowest order of magnitude value, within
a group of bits of a register or data value.
 MSB = Most Significant Bit = Generally the left most bit, with the highest order of magnitude value, within a
group of bits of a register or data value.
 Non-Volatile = No power is needed to maintain data stored in the memory.
 OPN = Ordering Part Number = The alphanumeric string specifying the memory device type, density,
package, factory non-volatile configuration, etc. used to select the desired device.
 Page = 256-byte aligned and length group of data.
 PCB = Printed Circuit Board.
 Register Bit References = Are in the format: Register_name[bit_number] or
Register_name[bit_range_MSB: bit_range_LSB].
 Sector = Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase
command used, groups of physical sectors may be erased as a larger logical sector of 64 kbytes.
 Write = An operation that changes data within volatile or non-volatile registers bits or non-volatile flash
memory. When changing non-volatile data, an erase and reprogramming of any unchanged non-volatile
data is done, as part of the operation, such that the non-volatile data is modified by the write operation, in
the same way that volatile data is modified – as a single operation. The non-volatile data appears to the
host system to be updated by the single write command, without the need for separate commands for
erase and reprogram of adjacent, but unaffected data.
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S25FL132K and S25FL164K
S25FL132K_164K_00_03 October 16, 2013