S29WSXXXN Datasheet, PDF (1/95 Pages) SPANSION – 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

S29WSxxxN MirrorBit™ Flash Family
S29WS256N, S29WS128N, S29WS064N
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only
Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
PRELIMINARY
General Description
The Spansion S29WS256/128/064N are Mirrorbit^TM Flash products fabricated on 110 nm process technology. These burst
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate
banks using separate data and address pins. They operate up to 80 MHz and use a single V_CC of 1.7–1.95 volts that
makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered
power consumption.
Distinctive Characteristics
„ Single 1.8 V read/program/erase (1.70–1.95 V)
„ 110 nm MirrorBit™ Technology
„ Simultaneous Read/Write operation with zero
latency
„ 32-word Write Buffer
„ Sixteen-bank architecture consisting of 16/8/4
Mbit for WS256N/128N/064N, respectively
„ Four 16 Kword sectors at both top and bottom of
memory array
„ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
„ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
„ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
„ 20-year data retention (typical)
„ Cycling Endurance: 100,000 cycles per sector
(typical)
„ RDY output indicates data available to system
„ Command set compatible with JEDEC standards
„ Hardware (WP#) protection of top and bottom
sectors
„ Dual boot sector configuration (top and bottom)
„ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
„ Low V_CC write inhibit
„ Persistent and Password methods of Advanced
Sector Protection
„ Write operation status bits indicate program and
erase operation completion
„ Suspend and Resume commands for Program and
Erase operations
„ Unlock Bypass program command to reduce
programming time
„ Synchronous or Asynchronous program operation,
independent of burst control register settings
„ ACC input pin to reduce factory programming time
„ Support for Common Flash Interface (CFI)
„ Industrial Temperature range (contact factory)
Performance Characteristics
Read Access Times
Speed Option (MHz)
80
Max. Synch. Latency, ns (t_IACC)
Max. Synch. Burst Access, ns (t_BACC)
Max. Asynch. Access Time, ns (t_ACC)
Max CE# Access Time, ns (t_CE)
Max OE# Access Time, ns (t_OE)
69
9
70
70
11.2
66
69
11.2
70
70
11.2
54
69
13.5
70
70
13.5
Current Consumption (typical values)
Continuous Burst Read @ 66 MHz
Simultaneous Operation (asynchronous)
Program (asynchronous)
Erase (asynchronous)
Standby Mode (asynchronous)
35 mA
50 mA
19 mA
19 mA
20 µA
Typical Program & Erase Times
Single Word Programming
Effective Write Buffer Programming (V_CC) Per Word
Effective Write Buffer Programming (V_ACC) Per Word
Sector Erase (16 Kword Sector)
Sector Erase (64 Kword Sector)
40 µs
9.4 µs
6 µs
150 ms
600 ms
Publication Number S29WSxxxN_00 Revision F Amendment 0 Issue Date October 29, 2004