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S29WS-J Datasheet, PDF (1/97 Pages) SPANSION – 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | |||
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S29WS128J/064J
128/64 Megabit (8/4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write,
Burst Mode Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
 Single 1.8 volt read, program and erase (1.65 to
1.95 volt)
 Manufactured on 0.11 µm process technology
 Simultaneous Read/Write operation
â Data can be continuously read from one bank while
executing erase/program functions in other bank
â Zero latency between read and write operations
â Four bank architecture: WS128J: 16Mb/48Mb/48Mb/
16Mb, WS064J: 8Mb/24Mb/24Mb/8Mb
 Programable Burst Interface
â 2 Modes of Burst Read Operation
â Linear Burst: 8, 16, and 32 words with wrap-around
â Continuous Sequential Burst
 Secured Silicon Sector region
â 128 words accessible through a command sequence,
64words for the Factory Secured Silicon Sector and
64words for the Customer Secured Silicon Sector.
 Sector Architecture
4 Kword x 16 boot sectors, eight at the top of the address
range, and eight at the bottom of the address range
â WS128J: 4 Kword X 16, 32 Kword x 254 sectors
Bank A : 4 Kword x 8, 32 Kword x 31 sectors
Bank B : 32 Kword x 96 sectors
Bank C : 32 Kword x 96 sectors
Bank D : 4 Kword x 8, 32 Kword x 31 sectors
â WS064J: 4 Kword x 16, 32 Kword x 126 sectors.
Bank A : 4 Kword x 8, 32 Kword x 15 sectors
Bank B : 32 Kword x 48 sectors
Bank C : 32 Kword x 48 sectors
Bank D : 4 Kword x 8, 32 Kword x 15 sectors
 WS128J : 84-ball (8 mm x 11.6 mm) FBGA package,
WS064J : 80-ball (7 mm x 9 mm) FBGA package
 Cyclling Endurance : 1,000,000 cycles per sector
typical
 Data retention : 20-years typical
Performance Characteristics
 Read access times at 80/66 MHz
â Synchronous latency of 71/56 ns (at 30 pF)
â Asynchronous random access times of 55/55 ns (at
30 pF)
 Power dissipation (typical values, CL = 30 pF)
â Burst Mode Read: 18 mA @ 80Mhz
â Simultaneous Operation: 60 mA @ 80Mhz
â Program/Erase: 15 mA
â Standby mode: 0.2 µA
Hardware Features
 Handshaking feature available
â Provides host system with minimum possible latency
by monitoring RDY
 Hardware reset input (RESET#)
â Hardware method to reset the device for reading
array data
 WP# input
â Write protect (WP#) function allows protection of
four outermost boot sectors, regardless of sector
protect status
 Persistent Sector Protection
â A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector
â Sectors can be locked and unlocked in-system at VCC
level
 Password Sector Protection
â A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-defined 64-bit password
 ACC input: Acceleration function reduces
programming time; all sectors locked when ACC =
VIL
 CMOS compatible inputs, CMOS compatible outputs
 Low VCC write inhibit
Software Features
 Supports Common Flash Memory Interface (CFI)
 Software command set compatible with JEDEC
42.4 standards
â Backwards compatible with Am29BDS, Am29BDD,
Am29BL, and MBM29BS families
 Data# Polling and toggle bits
â Provides a software method of detecting program
and erase operation completion
 Erase Suspend/Resume
â Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
 Unlock Bypass Program command
â Reduces overall programming time when issuing
multiple program command sequences
Publication Number S29WS-J_00 Revision A Amendment 6 Issue Date May 11, 2006
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient
production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to
the valid combinations offered may occur.
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