MBM29F160TE70 Datasheet, PDF (1/49 Pages) SPANSION – FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20879-6E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29F160TE70/90
MBM29F160BE70/90
s DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE) and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E²PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
s PRODUCT LINE UP
Part No.
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29F160TE/BE
70
90
VCC = 5.0 V ± 10 %
70
90
70
90
30
40
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)