MBM29BS12DH15 Datasheet, PDF (1/84 Pages) SPANSION – BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
BURST MODE FLASH MEMORY
CMOS
128M (8M × 16) BIT
DS05-20910-2E
MBM29BS/FS12DH 15
s DESCRIPTION
The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as
8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed
in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase
operations. The device can also be programmed in standard EPROM programmers.
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s PRODUCT LINE UP
Part No.
Handshaking On/Off
Max Latency (even address in case of
Handshaking) Time (ns)
Synchronous/Burst _{Max Burst Access Time (ns)}
Max OE Access Time (ns)
Max Address Access Time (ns)
Asynchronous
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29BS12DH
Non-Handshaking
71
11
11
50
50
11
MBM29FS12DH
Handshaking
56
11
11
50
50
11
s PACKAGE
80-ball plastic FBGA
(BGA-80P-M04)