SLD322V Datasheet, PDF (4/7 Pages) Sony Corporation – High Power Density 0.5W Laser Diode

Temperature dependence of far field pattern
(Perpendicular to junction)
PO = 500mW
SLD322V
Dependence of wavelength
820
Po = 500mW
810
TC = 25°C
TC = 10°C
TC = –5°C
–90 –60 –30 0
30 60 90
Angle [degree]
Differential efficiency vs. Temperature characteristics
800
790
–10
0
10
20
30
Tc – Case temperature [°C]
1.0
0.5
0
–10
0
10
20
30
Tc – Case temperature [°C]
–4–