SLD322V Datasheet, PDF (3/7 Pages) Sony Corporation – High Power Density 0.5W Laser Diode

SLD322V
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
1000
800
TC = 0°C TC = 25°C
600
TC = –10°C
TC = 30°C
400
Optical power output vs. Monitor current characteristics
TC = 25°C
TC = 0°C
500
TC = –10°C
TC = 30°C
250
200
0
200 400 600 800 1000
IF – Forward current [mA]
Threshold current vs. Temperature characteristics
1000
500
0
0
0.5
1.0
Imon – Monitor current [mA]
Power dependence of far field pattern (Parallel to junction)
TC = 25°C
100
–10
0
10
20
30
Tc – Case temperature [°C]
Power dependence of far field pattern
(Perpendicular to junction)
TC = 25°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
–90 –60 –30 0
30 60 90
Angle [degree]
Temperature dependence of far field pattern
(Parallel to junction)
PO = 500mW
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
–90 –60 –30 0
30 60 90
Angle [degree]
TC = 25°C
TC = 10°C
TC = –5°C
–90 –60 –30 0
30 60 90
Angle [degree]
–3–