SLD104AU Datasheet, PDF (3/4 Pages) Sony Corporation – AlGaAs Laser Diode

Example of Representative Characteristics
SLD104AU
Temperature characteristic of threshold current
100
50
45
Far field pattern (FFP)
1.0
PO = 3mW
0.5
10
–10 0
25
50
100
TC – Case temperature [°C]
θ⊥
θ//
PIN diode current-voltage characteristics
0.25 [mA]
I
Tc = 25°C
PO = 3mW
V
0
–40
–20
0
20
40
Angle [degree]
Optical power output vs. Forward current characteristics
5
4
Tc = 25°C
Tc = 50°C
3
–1.0
0
1.0 [V]
2
1
–0.25
Relative light intensity vs. Waveform characteristics
PO = 3mW
0
20
40
60
80
100
IF – Forward current [mA]
Relative light intensity vs. Wavelength characteristics
PO = 5mW
778
779
780
781
782
λ – Wavelength [nm]
780
781
782
783
784
λ – Wavelength [nm]
–3–