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SLD104AU Datasheet, PDF (2/4 Pages) Sony Corporation – AlGaAs Laser Diode
SLD104AU
Electrical and Optical Characteristics (Tc = 25°C)
Item
Symbol
Condition
Threshold current
Ith
Operating current
Iop
PO = 3mW
Operating voltage
Vop
PO = 3mW
Wavelength
λ
PO = 3mW
Monitor current
Im
PO = 3mW,
VR = 5V
Radiation angle
(F. W. H. M.∗)
Perpendicular
Parallel
Asymmetry
θ⊥
θ//
∆SR ∗1
PO = 3mW
Positional
accuracy
Position
Angle
∆X, ∆Y, ∆Z
PO = 3mW
∆φ⊥
Differential efficiency
ηD
PO = 3mW
Astigmatism
AS
PO = 3mW
| Z// – Z⊥ |
Signal to noise ratio
fC = 7.5MHz
S/N
∆f = 30kHz
PO = 4mW
Dark current of PD
ID
VR = 5V
Capacitance of PD
CT
∗ F. W. H. M. : Full Width at Half Maximum
VR = 5V, f = 1MHz
Min.
1.7
760
0.08
20
9
0.2
Tc: Case temperature
Typ.
Max.
Unit
45
60
mA
52
70
mA
1.9
2.5
V
780
800
nm
0.15
0.4
mA
32
45
degree
17
25
degree
20
%
±150
µm
±3
degree
0.45
0.7 mW/mA
15
µm
88
dB
150
nA
30
pF
∗1
Power
SL SR
–7° 0 7°
| SL – SR |
∆SR =
SL + SR
θ//
–2–