3SK166A Datasheet, PDF (3/5 Pages) Sony Corporation – GaAs N-channel Dual Gate MES FET

3SK166A
100
(VDS = 5V)
ID vs. VG2S
80
60
40
20
0
–2.0
–1.5
–1.0
–0.5
VG2S – Gate 2 to source voltage [V]
NF vs. VG1S
6
(VDS = 5V, f = 800MHz)
5
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
0
4
3
2
VG2S = 0.5V
1.0V
1.5V
1
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
30
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
2.5
25
Ga
2.0
20
1.5
15
NF
1.0
10
0.5
5
0
0
0 2 4 6 8 10 12 14 16 18 20 22
ID – Drain current [mA]
100
(VDS = 5V)
gm vs. VG1S
80
60
VG2S
= 1.5V
1.0V
50
40
20
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
0.5V
0V
–0.5V
–1.0V
0
Ga vs. VG1S
30
(VDS = 5V, f = 800MHz)
25
VG2S = 1.5V
1.0V
20
1.5V
15
10
5
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. f
3.0
30
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
2.5
25
Ga
2.0
20
1.5
15
1.0
10
NFmin
0.5
5
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
–3–