3SK166A Datasheet, PDF (1/5 Pages) Sony Corporation – GaAs N-channel Dual Gate MES FET

3SK166A
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
8
V
• Gate 1 to source voltage
VG1S
–6
V
• Gate 2 to source voltage
VG2S
–6
V
• Drain current
ID
80
mA
• Allowable power dissipation PD
150
mW
• Channel temperature
Tch
150
°C
• Storage temperature
Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y11-PS