3SK165A Datasheet, PDF (3/5 Pages) Sony Corporation – GaAs N-channel Dual Gate MES FET

3SK165A
50
(VDS = 5V)
ID vs. VG2S
40
30
20
10
0
–2.0
–1.5
–1.0
–0.5
VG2S – Gate 2 to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
0
NF vs. VG1S
6
(VDS = 5V, f = 800MHz)
5
VG2S = 0.5V
4
3
1.0V
2
1.5V
1
0
–2.0–1.8–1.6–1.4–1.2 –1.0–0.8 –0.6–0.4–0.2 0 0.2
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
30
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
2.5
25
Ga
2.0
20
1.5
15
NF
1.0
10
0.5
5
0
0
0 2 4 6 8 10 12 14 16 18 20 22
ID – Drain current [mA]
50
(VDS = 5V)
gm vs. VG1S
40
30
VG2S
= 1.5V
20
1.0V
10
0
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
0.5V
0V
–0.5V
–1.0V
0
Ga vs. VG1S
30
(VDS = 5V, f = 800MHz)
25
VG2S = 1.5V
20
1.0V
15
0.5V
10
5
0
–2.0–1.8 –1.6–1.4–1.2–1.0–0.8 –0.6–0.4–0.2 0 0.2
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. f
3.0
40
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
2.5
35
2.0
30
Ga
1.5
25
1.0
NFmin
20
0.5
15
0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
–3–