3SK165A Datasheet, PDF (2/5 Pages) Sony Corporation – GaAs N-channel Dual Gate MES FET

3SK165A
Electrical Characteristics
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
∗ _{IDSS classification}
Symbol
Condition
VDS = 8V
IDSX
VG1S = –4V
VG2S = 0V
IG1SS
VG1S = –4V
VG2S = 0V
VDS = 0V
IG2SS
VG2S = –4V
VG1S = 0V
VDS = 0V
IDSS
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S = 1.5V
f = 1kHz
Ciss
Crss
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
NF
VDS = 5V
ID = 10mA
Ga
VG2S = 1.5V
f = 800MHz
Product name classification
3SK165A-0
3SK165A-1
IDSS RANK
20 to 55mA
20 to 35mA
(Ta = 25°C)
Min.
Typ.
Max. Unit
100 µA
–20 µA
–20 µA
20
55 mA
–1
–4
V
–1
–4
V
15
22
ms
0.5
1.0 pF
7.5
25
fF
1.2
2.5 dB
16
20
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
50
(VG2S = 1.5V)
40
30
20
10
0
0
2
4
6
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
–1.8V
8
–2–
50
(VDS = 5V)
ID vs. VG1S
40
30
20
VG2S
= 1.5V
1.0V
0.5V
0V
–0.5V
10
0
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
–1.0V
–1.5V
0