CXK5T81000ATM Datasheet, PDF (1/11 Pages) Sony Corporation – 131072-word x 8-bit High Speed CMOS Static RAM

CXK5T81000ATM/AYM/AM -10LLX/12LLX
131072-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T81000ATM/AYM/AM is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATM/AYM/AM is a suitable RAM
for portable equipment with battery back up.
CXK5T81000ATM
32 pin TSOP (Plastic)
CXK5T81000AYM
32 pin TSOP (Plastic)
Features
• Extended operating temperature range:
CXK5T81000AM
32 pin SOP (Plastic)
–25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX
-12LLX
85ns (Max.)
100ns (Max.)
Block Diagram
• Low standby current:
28µA (Max.)
A10
• Low data retention current: 24µA (Max.)
A11
A9
• Low voltage data retention: 2.0V (Min.)
A8
• Package line-up
A13
A15
CXK5T81000ATM/AYM
A16
A14
8mm × 20mm 32 pin TSOP package _A12
CXK5T81000AM
A7
Buffer
Row
Decoder
Memory
Matrix
1024 × 1024
VCC
GND
525mil 32 pin SOP package
A6
A5
Function
A4
A3
131072-word × 8-bit static RAM
A2
A1
A0
Structure
Silicon gate CMOS IC
OE
WE
Buffer
Buffer
I/O Gate
Column
Decoder
I/O Buffer
CE1
CE2
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE96324-ST