STB30H100C Datasheet, PDF (3/5 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Trench MOS Schottky technology

Technical Data
Data Sheet N1833 Rev. -
Electrical Characteristics:
Characteristics
Forward Voltage Drop (per
leg)*
Reverse Current at DC
Condition (per leg)*
Symbol
V_F1
V_F2
I_R1
I_R2
Condition
@ 7.5A, Pulse, T_J = 25 °C
@ 15A, Pulse, T_J = 25 °C
@ 7.5A, Pulse, T_J = 125 °C
@ 15A, Pulse, T_J = 125 °C
@V_R = rated VR
T_J = 25°C
@V_R = rated VR
T_J = 125°C
* Pulse Width < 300µs, Duty Cycle <2%
STB30H100C
Green Products
Typ.
0.54
0.76
0.63
0.66
0.005
Max.
-
0.80
-
0.70
1
Units
V
V
mA
1.6
12
mA
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case(per leg)
Approximate Weight
Case Style
Symbol
T_J
T_stg
R_θJC
wt
Condition
-
-
DC operation
-
D²PAK
Specification
-55 to +175
-55 to +175
2.5
1.85
Units
°C
°C
°C/W
g
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