STB30H100C Datasheet, PDF (1/5 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Trench MOS Schottky technology

STB30H100C
Technical Data
Data Sheet N1833 Rev. -
STB30H100C SCHOTTKY RECTIFIER
Applications:
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
• Center tap configuration
Green Products
Features:
• 175°C T_J operation
• Center tap configuration
• Ultralow forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• High frequency operation
• Trench MOS Schottky technology
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
Mechanical Dimensions: In mm
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
4.70
4.85
0
0.10
0.25
2.59
2.69
2.89
0.71
0.81
0.96
1.27
0.36
0.38
0.61
1.17
1.27
1.37
8.55
8.70
8.85
6.40
10.01
10.16
10.31
7.6
9.98
10.08
10.18
2.54
14.6
15.1
15.6
2.00
2.30
2.70
1.17
1.27
1.40
2.20
0.25BSC
0
-
8°
5°
4°
4°
D²PAK
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