SUF-6000 Datasheet, PDF (4/4 Pages) SIRENZA MICRODEVICES – 2-16 GHz Broadband pHEMT Amplifier

Pad Description
Advanced Information
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
2
1
Pad #
1
2
Function
Description
RF_IN
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
RF_OUT / Bias
This pad is DC coupled and matched to 50 Ohms.
Bias is applied through this pad.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Notes:
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
3. Die Thickness is 0.004 (0.100).
4. Typical bond pad is 0.004 (0.100) square.
5. Backside metalization: Gold.
6. Backside is Ground.
7. Bond pad metalization: Gold.
Device Assembly
Interconnect
Wire or Ribbon
Choke
+5V
Bypass Cap(s)
DC Block
50Ω Line
50Ω Line ^{DC Block}
3-5 mil gap
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-105420 Rev A