SUF-6000 Datasheet, PDF (3/4 Pages) SIRENZA MICRODEVICES – 2-16 GHz Broadband pHEMT Amplifier

Advanced Information
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
Typical Performance (GSG Probe Data)
Freq
V_D
Current
Gain
P1dB
OIP3
S11
(GHz)
(V)
(mA)
(dB)
(dBm)
(dBm)
(dB)
2
5
107
18.0
13.0
25.3
-14.2
2.4
5
107
18.9
13.6
26.1
-16.2
3
5
107
19.6
13.7
26.8
-18.6
4
5
107
20.2
14.1
26.8
-20.0
6
5
107
20.5
14.0
27.5
-19.7
10
5
107
19.6
13.2
26.4
-26.3
12
5
107
18.4
12.9
25.9
-19.9
Test C1o4nditions: 5
107
17.4
12.0
24.9
-12.1
16
5
107
14.5
10.6
23.8
-7.9
Test Conditions: GSG Probe Data With Bias Tees, OIP₃ Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C
S22
(dB)
-26.2
-32.0
-32.2
-26.9
-19.4
-13.3
-12.1
-11.5
-12.5
NF
(dB)
5.0
5.0
5.0
5.0
4.7
5.3
5.6
6.0
7.0
Current Variation vs. Temperature
Current vs. Voltage
120
115
110
105
100
95
90
4.75
4.85
4.95
5.05
Volatage (V)
Parameter
Max Device Current (I_D)
Max Device Voltage (V_D)
Max RF Input Power
Max Dissipated Power
Max Junction Temperature (T_J)
Operating Temperature Range (T_L)
Max Storage Temp.
Absolute Limit
163mA
5.5V
10dBm
150C
-40 to +85C
-65 to +150C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D < (T_J - T_L) / R_TH, j-l T_L=Backside of die
ELECTROSTATIC SENSITIVE DEVICE
Appropriate precautions in handling, packaging
and testing devices must be observed.
-20C
25C
85C
5.15
5.25
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-105420 Rev A